• 1
  • 2
  • 3
  • 4

What is SCR & TRIAC


The definition of SCR & TRIAC

A Silicon Controlled Rectifier (SCR), also known as a thyristor, is a semiconductor device used for controlling electrical power. It is a type of switch that can handle high currents and is often used in applications where the control of electrical power is necessary.

A TRIAC, which stands for "Triode for Alternating Current," is a semiconductor device used primarily for controlling electrical power in AC (alternating current) circuits. It is essentially a bidirectional version of the SCR (Silicon Controlled Rectifier).
Three-Quadrant Controlled Silicon: Three-quadrant controlled silicon operates in only three of the four possible quadrants. It can be controlled during the positive half-cycle, negative half-cycle, and the zero-crossing point (transition quadrant). This means it can conduct during the positive half-cycle, negative half-cycle, or remain non-conductive. Three-quadrant controlled silicon is typically used in applications where control of current during the positive and negative half-cycles is required.

Four-Quadrant Controlled Silicon: Four-quadrant controlled silicon operates in all four quadrants, including the positive half-cycle, negative half-cycle, and zero-crossing point (transition quadrant). This enables precise control of conduction and cutoff, regardless of whether the voltage is positive or negative. Four-quadrant controlled silicon is commonly used in applications that demand more versatile current control, such as motor control and power regulation.

The choice between three-quadrant and four-quadrant controlled silicon depends on the specific requirements of your application. If you only need to control current during the positive and negative half-cycles, then three-quadrant controlled silicon may suffice. However, if you require comprehensive current control, including operation in the transition quadrant, then four-quadrant controlled silicon may be more suitable.

SCR Product Features

Ø High voltage capability (200V to 2000V).

Ø High surge current capability (up to 5000A).

Ø Chip glass passivation.

Ø High thermal conductivity and durability.

Ø Electrical isolation packaging.

 

TRIAC Product Features

Ø High surge current capability (up to 1000A).

Ø High voltage capability (200V to 2000V).
High commutation dv/dt capability.

Ø Enhanced dynamic performance.

Ø High junction temperature of 150°C.


The KEY point to consider when choose SCR & TRIAC

Voltage Rating: The typical voltage rating is generally 3-4 times the application voltage. For example, in regions with a mains voltage of 220V, 

thyristors are typically selected with a voltage rating greater than 600V or 800V. Inadequate voltage rating can lead to breakdown of the thyristor chip.

 On-State Current: The current-carrying capacity of thyristors, for discrete devices, usually ranges from 1A to 40A. The current rating is determined 

by the size of the chip, and therefore, the current rating is directly proportional to the chip's size and cost.

Trigger Current: Thyristors are controlled by current, so selecting the appropriate trigger current is crucial. Choosing a current that is too large may 

result in failure to trigger, while selecting one that is too small can make the trigger overly sensitive, leading to unintentional triggering (especially 

when there are interference currents in the product or circuit).

Junction Temperature: Temperature tolerance is another critical parameter for thyristors. Products are typically categorized into standard

 junction temperature and high junction temperature. High junction temperature products usually exceed 150°C and can effectively operate

 at temperatures up to 180°C before losing control. Products intended for high-temperature environments must be carefully selected to ensure they

 have high junction temperature ratings. Other parameters such as Ih, IL, dv/dt, and more also play a role in thyristor selection.

 Functions of Thyristors: Rectification, inversion, frequency conversion, voltage regulation, temperature control, contactless switching, etc.


Applications of SCR & TRIAC
SCR & TRIAC are extensively used in applications such as dimmable lights, variable-speed fans, air conditioning units, refrigerators, washing 

machines, cameras, stereo systems, sound and light control circuits, timers, gas igniters, toys, power tools, printers, motorcycle igniters, regulators, 

and industrial control systems, including industrial boilers, among others.

SCR





Topdiode P/N#

Package

Cross to brands

Cross to P/N

Cross to package

100-8U

TO-92

WeEn

BT169D-L,116

TO-92

100-8U

TO-92

ST

TS110-8A2-AP

TO-92

100-8W

TO-223

NXP

BT169W

TO-223

CR03

TO-223

ST

X0202MN

TO-223

S1215-8F

TO-220F

WeEn

BT151X-800R

TO-220F

S1215-8B

TO-220B

ST

TYN812RG

TO-220AB

S1215-6D

TO-252

ST

TN1215-600B-TR

DPAK

S1215-8B

TO-220B

Littelfuse

S8012RTP

TO-220R

S1615-8B

TO-220B

ST

TYN816RG

TO-220AB

S1615-8F

TO-220C

WeEn

BT152-800R

TO-220AB

S1615-8B

TO-220B

Littelfuse

S8016RTP

TO-220R

S7560-12N

TO-247

Vishay

VS-50TPS12L-M3

TO-247AD

S7560-12N

TO-247

IXYS

CLA50E1200HB

TO-247AD

S5560-16N

TO-247

WeEn

TYN50W-1600T

TO-247

S5560-16N

TO-247

Littelfuse/IXYS

CLA30E1200HB

TO-247

S7560-16N

TO-247

IXYS

CS45-16IO1

TO-247AD

S10060-16NS

TO-247S

IXYS

CLA80MT1200NHB

TO-247AD

S10060-16NS

TO-247S

Vishay

VS-70TPS16PbF

TO-247

TRIAC





Topdiode P/N#

Package

Cross to brands

cross to P/N

Cross to package

T0210-8F

TO-220F

WeEn

BTA202X-800E

TO220F

T0210-8W

SOT-223

WeEn

BTA202W-800ET

SOT223

T0405-8D

TO-252

WeEn

BTA204S-800B

DPAK

T0405-8W

SOT-223

WeEn

BTA204W-800C

SOT223

T0405-8B

TO-220B

WeEn

BTA204-800E

TO-220AB

 

Unleashing Power and Efficiency: Super Trench MOSFET vs. Standard MOSFET

In the world of power electronics, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) play a vital role in controlling and amplifying electrical signals. 

Over the years, MOSFET technology has evolved, giving rise to various advancements that have revolutionized the efficiency and performance of power devices. In this article, 

we will explore the key differences and advantages of a cutting-edge MOSFET design known as the Super Trench MOSFET, as compared to the conventional standard MOSFET.


Standard MOSFET:
The standard MOSFET has been the workhorse of the power electronics industry for many years. 

It features a planar structure with a gate oxide layer and a simple cell design. Standard MOSFET 

provide reasonable performance in terms of voltage ratings, on-resistance, and switching speed. 

However, they face certain limitations when it comes to achieving higher power density and minimizing 

conduction losses.

Super Trench MOSFET:
The Super Trench MOSFET represents a significant advancement in MOSFET design. It is specifically 

engineered to address the shortcomings of standard MOSFETs and unlock new possibilities in power 

electronics applications. The Super Trench MOSFET features a unique cell structure with an optimized 

trench gate design and a reduced specific on-resistance.

At present, the main manufacturers of this product are as follows:

Onsemi, Topdiode , Infineon, Diotec, Rectron Semiconductor, NCE etc.


Advantages of Super Trench MOSFET:
Lower On-Resistance: One of the key advantages of the Super Trench MOSFET is its significantly lower on-resistance compared to standard MOSFETs. This results in reduced conduction losses, leading to higher efficiency and improved power conversion capabilities.

Higher Power Density: The optimized trench gate design of the Super Trench MOSFET enables higher packing density, allowing for more MOSFET cells within a given area. 

This translates to increased power density, making it an ideal choice for space-constrained applications.

Enhanced Switching Performance: The Super Trench MOSFET exhibits improved switching characteristics, enabling faster turn-on and turn-off times. This results in reduced switching losses and improved overall system efficiency.

Better Thermal Management: With lower on-resistance and improved power dissipation capabilities, the Super Trench MOSFET offers enhanced thermal management. 

This allows for higher power handling and improved reliability in demanding operating conditions.

Applications of Super Trench MOSFET:

The unique advantages offered by the Super Trench MOSFET make it well-suited for various power electronics applications. Some notable applications include:
Power Supplies: Super Trench MOSFETs can be used in high-efficiency switching power supplies, enabling compact and energy-efficient designs.
Motor Drives: The improved switching performance and power density of Super Trench MOSFETs make them ideal for motor control applications, leading to better energy conversion and 

motor efficiencRenewable Energy Systems: Super Trench MOSFETs can enhance performance of solar inverters, wind turbine systems, and other renewable energy applications by 

maximizing power conversion efficiency.


Car amplifiers

Car amplifiers are electronic devices that increase the power of the car audio system signals that pass through it. 
Car amplifiers manufacturer will use some audio ICs, IGBT, Mosfet and Diodes as following:

- SMD C.I. DRIVER DIGITAL IRS2092STR SOIC-16
- SMD CI DRIVER DIGITAL SOIC16 IRS20957STRPBF
- IGBT FGL40N120ANDTU

- IGBT FGH60T65SQD-F155-D

- Mosfet IRLML2244TRPbF
- Mosfet IRLML9303TRPBF


Topdiode Manufacturer provide solution for car amplifiers and audio cross over circuit.

Topdiode offer these components to audio components market, amplifiers and cross over manufacturers.

Topdiode Audio IC7012  replace IR_INFINEON [IRS2092STRPBF 
Topdiode Audio IC NSA2092 SOIC16 replace IR_INFINEON [IRS2092STRPBF
Topdiode IGBT 40TD120WW TO-264 REPLACE IGBT FGL40N120ANDTU

SMD electrolytic capacitors provide small size solution for car amplifiers circuit.
Premium metallized polypropylene film capacitors, audio capacitors are excellent capacitors for cross over circuit.

Supplier performance card - 100% on time delivery & ZERO failures.

Congratulations!!
Topdiode once again has received the “supplier performance report” 
of 100% on time delivery & ZERO failures from one of our EU customers.

Panasonic stops supplying #EEHZC1J470V

Have you heard? Panasonic stops supplying #EEH-ZC1J470V

UF capacitos has equivalent, 4 weeks delivery, cost down around 50~300%.  

many series like, long life to 20000H, High temp 125C. low ESR, etc.                                   

UF capacitors. an 28+ ISO mfg in China,  
Committed to cost down with equivalent to replace 1st tier brands like Panasonic, Nichicon, in non-auto field.

Quality is recognized by GE, PNE, Jabil, Bosch etc. Thank you
#Electronic_Component #UF_Capacitors #SMD_ECAP #Cost_down

Happy New Year 2023

Dear valued customers and partners,

Happy New Year 2023 !! 
With 2022 coming to a close, we wanted to reach out and send our best wishes.
Thank you for your support. wish you and your family a happy, healthy, and prosperous New Year of Rabbit.

#China_supplier #Electronic_components #Diode #MOSFET #cost_down #High quality.

#China_supplier #Electronic_components #Diode #MOSFET #cost_down #High quality.

China's domestic chip companies MediaTek are the first one to release the world's most advanced #4nm

Apple's A16 processor is the first chip with a 4nm process, but MediaTek's Dimensity 9200 uses TSMC's more advanced second-generation 4nm process. Therefore, MediaTek can be said to be the first to adopt the world's most advanced 4nm chip manufacturer. It is also the strongest technology in the mobile phone chip industry.

According to the data released by MediaTek, benefiting from the excellence of the second-generation 4nm process, the performance of the Dimensity 9200 chip has increased by 12%, and the power consumption has dropped by 25%. The first place in the industry highlights the technical advantages of the Dimensity 9200 chip.

 #Topdiode #UF_capacitors #China_manufacturer #Electronic_components_supplier #Capacitors #diode #TVS_diode #MOSFET 

Parts especially designed for smart meters

Check out following parts which is especially designed for smart meters. 
for both single phase and 3 phase smart meter with lead time around 4-5 weeks 
 #Smart_Meters #electronics_components #China_manufacturer #Topdiode_Group #UF_Capacitors #cost_down #Fast_delivery.

Why are tantalum capacitors required to derate the voltage?

The suitable operating conditions of tantalum capacitors are -55-+125 degrees, and the rated voltage can be applied within 85 degrees for testing. It is said that such conditions have shown that the temperature characteristics of tantalum capacitors are very good, but one thing is often overlooked, that is, under this condition, the test is carried out with a protective resistance of 1000 ohms. At the moment when the product is energized, the voltage and current in the circuit have very small surge changes, and the excessive instantaneous current is suppressed by the series resistance. Therefore, the change has an impact on the tantalum capacitor.

In actual use, tantalum capacitors are often used in power circuits without any resistance protection for filtering or charging and discharging. If such circuits use an external power supply, at the moment of switching, the circuit will generate a very high voltage. Surge voltage and current changes, therefore, when used in such circuits, tantalum capacitors will be subjected to voltage and large current surges exceeding the rated value at the moment of switching and breakdown. Therefore, tantalum capacitors used in such circuits , After a lot of experiments, it has been proved that if you want to ensure its sufficient reliability, it must be greatly derated to ensure that the sum of the surge voltage and reverse voltage instantly applied to the product cannot exceed the rated value. Tantalum capacitors in impedance circuits are therefore required to be derated to 1/3 of the rated value to ensure reliability.

Such requirements have brought a lot of inconvenience to actual users; on the one hand, many users do not know such harsh conditions of use of tantalum capacitors in such circuits, so the use voltage is too high, which often causes breakdown, and on the other hand, On the one hand, users cannot achieve chip products with higher withstand voltage capabilities under the condition that the volume and capacitance are strictly limited.

The reason for such harsh conditions in the specific use of tantalum capacitors is actually a dangerous failure mode of tantalum capacitors; when the leakage current of tantalum capacitors is too large, the withstand voltage of the product will decrease rapidly, followed by breakdown. It can cause the rapid collapse of the dielectric layer and the phenomenon of burning or explosion in an instant. This defect causes the tantalum capacitor to be very fragile in circuits with large surge currents; the surge resistance is the highest among all capacitors.

聚合内容